| 摘要 |
PURPOSE:To obtain a photovoltaic device having high conversion efficiency by forming at least one of the P-type or N-type semiconductor layer of the photovoltaic device by the junctions of each semiconductor layer of the P-type, an I-type and the N-type of zinc atoms, selenium atoms, tellurium atoms and hydrogen atoms. CONSTITUTION:An electrode 102, an N-type semiconductor layer 103, an I-type semiconductor layer 104, a P-type semiconductor layer 105, a transparent electrode 106 and collecting electrodes 107 are shaped onto a supporter 101 in the order, thus forming a photovoltaic device 100. Light is projected from the transparent electrode 106 side. At least one of the P-type and N-type semiconductor layers 105, 103 consists of zinc atoms, selenium atoms, tellurium atoms and at least hydrogen atoms. The photovoltaic device is constituted of a deposit film, which contains a P-type or N-type doping agent and in which the ratio of the quantities of selenium atoms is kept within a range from 1:9 to 3:7 in atomicity, hydrogen atoms are included in the quantity of 1-4atomic% and the rate of crystal grains per unit volume is brought to 65-85vol.%. |
