| 摘要 |
PURPOSE:To eliminate the generation of swell of the end portion of a worked trench by arranging an SiO2 layer, in which impurity is not doped at all, between a base substrate and a thin film, as an object to be worked, and projecting a laser light whose wavelength is equal to or shorter than 400nm. CONSTITUTION:By making a light beam 11 pass a beam expander 5 and a slit 6, a laser beam 13 is obtained, and converged by a cylindrical lens 7 in the manner in which the width of an open trench on a working surface becomes 20mum. A beam 14 is projected in a linear form on an object 2 to be worked on a substrate 9, and the open trench is formed by working. For a surfaces to be worked, a non-doped SiO2 film 11 of about 200Angstrom thick formed by sputtering method is arranged on a green plate glass 8, and thereon an ITO (indium tin oxide) transparent conductive film 2 is formed. Thereby, the residue of melted material can not be found in the vicinity of both ends of the trench 1, and a fine surface without the generation of swell can be obtained. |
