| 摘要 |
PURPOSE:To obtain a photovoltaic device capable of effectively converting the component of a short wavelength into photocurrents by forming the photovoltaic device of a P-type semiconductor layer, an I-type semiconductor layer and an N-type semiconductor layer and shaping one of the P-type or N-type semiconductor layer of a specific material. CONSTITUTION:A photovoltaic device is formed of a P-type semiconductor layer 103, an I-type semiconductor layer 104 and an N-type semiconductor layer 105. Eother one of the semiconductor layer 105 or the semiconductor layer 103 consists of zinc atoms, selenium atoms and at least hydrogen atoms and contains a P-type or N-type doping agent, hydrogen atoms are included in the quantity of 1-4atomic%, and either one of them is shaped of a deposit film in which the rate of crystal grains per unit volume is brought to 65-85vol.%. The semiconductor layer 104 is formed of an unsingle crystal semiconductor material composed of silicon atoms and both or one at least hydrogen atoms and fluorine atoms. Accordingly, open circuit voltage is elevated, short-circuit currents are increased, and a characteristic change with usage can be reduced because a laminating type is shaped. |
