发明名称 INK FOR THIN-FILM RESISTOR FORMATION AND MANUFACTURE OF THIN-FILM RESISTOR USING IT
摘要 <p>PURPOSE:To obtain an ink, for thin-film resistor formation use, whose quality is always definite, which can form a pattern of high accuracy and whose electrical characteristic is good by a method wherein a compound containing ruthenium in a structure, abietic acid and a solvent used to dissolve these are used as main constituents. CONSTITUTION:A compound containing ruthenium in a structure, a metal compound as required, abietic acid and a solvent used to dissolve these are contained as main constituents. An inorganic compound such as ruthenium chloride or the like, various ruthenium alkoxides, an organic ruthenium compound having a ruthenium-carbon-based bond or the like can be enumerated as the compound containing ruthenium in the structure. A solvent which mutually dissolve abietic acid, a ruthenium compound and the metal compound can be used as the solvent. Thereby, it is possible to obtain an ink, for thin-film resistor formation use, whose quality is always definite, whose electrical characteristic is good and which can form a thin-film resistor.</p>
申请公布号 JPH021101(A) 申请公布日期 1990.01.05
申请号 JP19880142102 申请日期 1988.06.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI CHIHARU;OKANO KAZUYUKI;TABATA MUNEHIRO;ISOZAKI YASUTO;HASEGAWA HIROSHI
分类号 B41J2/335;C09D11/02;C09D11/033;H01C7/00;H01C17/06 主分类号 B41J2/335
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