| 摘要 |
<p>A magneto-optic memory device of reflective film structure which comprises a dielectric film (2), a magneto-optic memory film (3), a dielectric film (4) and a reflective film (5) superposed in this order on a substrate (1), the magneto-optic memory film being composed of an amorphous rare earth-transition metal alloy having the composition formula of: Dyx(FeyCo1-y)1-x wherein x is 0.20 to 0.27 and y is 0.70 to 0.90, and having a thickness of 10 to 50 nm.</p> |
