发明名称 |
Semiconductor devices. |
摘要 |
<p>In a semiconductor device (54) having trench-shaped element isolating regions (37) formed in a semiconductor body (21) and also a conductive layer (42) extending on each element isolating region (37) and connected to an impurity diffusion region (46) of the semiconductor body (21) there is formed an insulator layer region (34) between an extension of the conductive layer (42) and the element isolating region (37), and the insulator layer region (34) is buried in the surface portion of the semiconductor body (21).</p> |
申请公布号 |
EP0349107(A2) |
申请公布日期 |
1990.01.03 |
申请号 |
EP19890304626 |
申请日期 |
1989.05.08 |
申请人 |
SONY CORPORATION |
发明人 |
HOZUMI, HIROKI C/O PATENT DIVISION;NAKAMURA, MINORU C/O PATENT DIVISION;MIWA, HIROYUKI C/O PATENT DIVISION;KAYANUMA, AKIO C/O PATENT DIVISION |
分类号 |
H01L29/73;H01L21/331;H01L21/763;H01L23/485;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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