MONOLITHIC INTEGRATED BIPOLAR DARLINGTON CIRCUIT

摘要

A monolithically integrated bipolar Darlington circuit comprising a driver transistor and output transistor whereby a semiconductor body contains a base layer of a first conductivity type and a collector layer of a second conductivity type which is below the base layer and the driver transistor and the output transistor have emitters of the second conductivity type which are formed in the base layer and whereby the emitter of the driver transistor is conductively connected to a subregion of the base layer which lies between both transistors. The object is to obtain high switching speed when switching collector current on and off and this is achieved in that the emitter of the output transistor and the driver transistor are each composed of a plurality of emitter regions which are arranged such that each emitter region of the output transistor is positioned adjacent to at least one emitter region of the driver transistor such that every emitter region of the driver transistor is provided with a conductive coating which contacts the base layer between it and the neighboring emitter region of the output transistor. The invention can be utilized in power devices for the electronic arts.