| 发明名称 |
STRUCTURE CONTAINING HYDROGENATED AMORPHOUS SILICON AND PROCESS |
| 摘要 |
A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided. |
| 申请公布号 |
EP0253201(A3) |
申请公布日期 |
1990.01.03 |
| 申请号 |
EP19870109391 |
申请日期 |
1987.06.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HALLER, IVAN |
| 分类号 |
H01L21/205;H01L21/302;H01L21/306;H01L21/3065;H01L21/336;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/76;H01L21/203 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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