Manufacturing method for integrated resonator

摘要

A manufacturing method for an integrated resonator is disclosed wherein a mass of O+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO2 layer is formed by annealing the ion implanted substrate, an SiO2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO2 layer corresponding to the cavity in the substrate.