发明名称 Internal reactor for chemical vapor deposition
摘要 A CVD apparatus including an internal reactor for in-situ generation of source gases for the CVD reaction. The internal reactor comprises a shell for containing solid precursor material, inlet and outlet means for a precursor gas and the gaseous product respectively, and preferably gas distribution means and means for preventing entrainment of the solid precursor in the gas flow. The internal reactor is positioned within the CVD reactor to provide the optimum temperature for the reaction taking place within the internal reactor.
申请公布号 US4890574(A) 申请公布日期 1990.01.02
申请号 US19880206400 申请日期 1988.06.14
申请人 GTE LABORATORIES INCORPORATED 发明人 SARIN, VINOD K.;D'ANGELO, CHARLES;REBENNE, HELEN E.
分类号 C23C16/40;(IPC1-7):C23C16/00 主分类号 C23C16/40
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