发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
This invention concerns a semiconductor device manufacturing method wherein connection is made of the end portion of aluminium bonding wire to a lead electrode of material selected from the group consisting of copper and copper alloy in a manner such that the reaction layer thickness is 0.2 micron or more, thereby resulting in excellent electrical characteristics in high temperature conditions or in high temperature, high humidity conditions.
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申请公布号 |
US4891333(A) |
申请公布日期 |
1990.01.02 |
申请号 |
US19880150499 |
申请日期 |
1988.02.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BABA, HIROYUKI;MATSUZAKI, TAKASHI |
分类号 |
H01L21/60;B23K20/233;H01L21/48;H01L23/49;H01L23/495 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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