发明名称 Bulk avalanche semiconductor laser
摘要 A bulk semiconductor laser which uses optically triggered avalanche conduction to initiate the lasing action in the bulk. A semiconductor block has electrodes coupled on opposing sides and a high voltage is applied across the electrodes which is less than the voltage required for avalanche breakdown. The block is irradiated with light which produces charge carriers in the block to initiate avalanche conduction, which results in a large number of charge carriers. The charge carriers recombine to generate a second amount of electromagnetic radiation. This radiation is reflected back into the block on two opposing sides, thus resulting in a laser emission.
申请公布号 US4891815(A) 申请公布日期 1990.01.02
申请号 US19870108191 申请日期 1987.10.13
申请人 POWER SPECTRA, INC. 发明人 RAGLE, LARRY O.;DAVIS, STEPHEN J.
分类号 H01S5/00;H01S5/30;H01S5/32 主分类号 H01S5/00
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