发明名称 X-ray reflective mask and system for image formation with use of the same
摘要 PCT No. PCT/JP87/00177 Sec. 371 Date Nov. 19, 1987 Sec. 102(e) Date Nov. 19, 1987 PCT Filed Mar. 24, 1987 PCT Pub. No. WO87/06028 PCT Pub. Date Oct. 8, 1987.X-ray lithography which has been applied, for instance, to reproduction of a pattern for integrated electronic circuit wherein the proximity method is prevailed with use of a transmissive patterned mask. But this conventional method is defective for instance, in difficulty of dimensional reduction from an original pattern. In contrast, the disclosed invention overcomes such defect by introducing an X-ray reflective mask element, instead of conventional type of transmission. The reflective mask element is comprised of a crystalline substrate to reflect incident X-ray according to the Bragg's diffraction rule, which was worked out of a crystalline body having outwardly curved lattice surfaces, wherein the substrate face is formed to have an inclination against the lattice surfaces so that reflection at center of the substrate face will converge to a point on normal line assumed at the same center. Another aspect of the disclosure herein is directed to a system for X-ray projection and image formation with use of said mask element, additionally comprising an X-ray source, a Fresnel zone plate.
申请公布号 US4891830(A) 申请公布日期 1990.01.02
申请号 US19870137857 申请日期 1987.11.19
申请人 SHIMADZU CORPORATION 发明人 IWAHASHI, KENJI
分类号 G03F1/14;G03F1/24;G03F7/20 主分类号 G03F1/14
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