| 摘要 |
PCT No. PCT/JP85/00616 Sec. 371 Date Jul. 8, 1986 Sec. 102(e) Date Jul. 8, 1986 PCT Filed Nov. 6, 1985 PCT Pub. No. WO86/03051 PCT Pub. Date May 22, 1986.The present invention relates to oxide semiconductors for thermistors for use as sensors mainly in a temperature range of 200 DEG -500 DEG , an embodiment of which comprises 5 kinds of metal elements 60.0-98.5 atomic % of Mn, 0.1-5.0 atomic % of Ni, 0.3-5.0 atomic % of Cr, 0.2-5.0 atomic % of Y and 0.5-28.0 atomic % of Zr, to the sum total of 100 atomic %; the oxide semiconductors for thermistors have an excellent characteristic feature as temperature sensors for use in intermediate and high temperature ranges; that is, giving such a small resistance change with time as within +/-5% at temperatures between 200 DEG -500 DEG C., they are most suitable for temperature measurement applications where high reliability is required at high temperatures.
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