发明名称 |
Processes for the manufacture of laser including monolithically integrated planar devices |
摘要 |
Monolithically integrated devices are disclosed in which a laser having a capping layer with a relatively high conductivity imparting ion concentration is laterally offset along a planar surface from a surface layer having a lower conductivity imparting ion concentration. The monolithically integrated laser and surface layer are formed by providing laterally offset channels in a planar substrate surface and selectively epitaxially growing the required laser layers and the surface layer in separate channels.
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申请公布号 |
US4891093(A) |
申请公布日期 |
1990.01.02 |
申请号 |
US19860908743 |
申请日期 |
1986.09.18 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
SMITH, FRANK T. J. |
分类号 |
H01L27/15;H01S5/00;H01S5/02;H01S5/026;H01S5/042;H01S5/22;H01S5/227;H01S5/32 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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