| 摘要 |
<p>The invention relates to semiconductor components whose external connections are made with metal beams. In order to reduce the stray capacitance formed by a beam 3, the semi-insulating substrate 1 and at least one semiconducting layer of the component, the said beam 3 is affixed to the substrate 1 by means of a metal pillar 11, of smaller cross-section than the beam. The affixing of the pillar 11 at a distance "d" from the edge 23 of the component's microchip makes this stray capacitance constant for all the components of a slice cut chemically through the rear face. Application to microwave components such as 94 GHz Schottky or p-i-n diodes. <IMAGE></p> |
