发明名称 Method of depositing conductive paths on a substrate
摘要 A method of forming successive metal layers of varying widths on a substrate is disclosed. A mask (14) having a through aperture (15) is provided, the mask including a constricted neck portion (17) between its upper and lower surfaces. Successive metal layers (20, 22, 23) are applied over the substrate through the aperture in the mask sequentially by sputtering methods, which form metallic layers (20) (23) wider than the constricted neck portion of the mask, and by vapor deposition methods which form a narrower metal layer (22) corresponding to the transverse dimension of the constricted portion of the mask. <IMAGE>
申请公布号 GB2220108(A) 申请公布日期 1989.12.28
申请号 GB19890002168 申请日期 1989.02.01
申请人 * AVX CORPORATION;* IBM CORPORATION 发明人 JOHN * GALVAGNI;ROBERT * MILLER
分类号 H01G4/12;C23C14/04;C23C14/22;H01C1/142;H01G4/012;H01G4/30;H01G13/00;H05K3/14 主分类号 H01G4/12
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