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发明名称
DOPPELT DIFFUNDIERTES MOSFET-ELEMENT
摘要
申请公布号
DE3920010(A1)
申请公布日期
1989.12.28
申请号
DE19893920010
申请日期
1989.06.20
申请人
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., SEOUL/SOUL, KR
发明人
KIM, JONG OH, SEOUL/SOUL, KR;KIM, JIN HYUNG, CHUNG-BUK, KR
分类号
H01L29/06;H01L29/78
主分类号
H01L29/06
代理机构
代理人
主权项
地址
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