| 摘要 |
<p>An enclosed buried channel device includes a buried channel region (26) disposed under a gate electrode (24). Source and drain regions (54) and (56) are formed on either side of gate electrode (26). The source/drain regions (54) and (56) are separated from the various channel regions (26) by isolating regions of N-type material (58) and (60), respectively. The isolating regions (58) and (60) are operable to be inverted during normal operation of the transistor when the transistor is conducting, but are operable to isolate fields on the drain side of the transistor from the buried channel region (26) to lower the leakage current of the device in the off state.</p> |
