发明名称 PATTERN-FORMING MATERIAL AND ITS PRODUCTION AND USE
摘要 A novel high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl groups in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.
申请公布号 DE3574418(D1) 申请公布日期 1989.12.28
申请号 DE19853574418 申请日期 1985.05.30
申请人 FUJITSU LIMITED 发明人 FUKUYAMA, SHUN-ICHI;YONEDA, YASUHIRO;MIYAGAWA, MASASHI;NISHII, KOTA
分类号 G03F7/004;G03F7/075;(IPC1-7):G03F7/10 主分类号 G03F7/004
代理机构 代理人
主权项
地址