发明名称 |
PATTERN-FORMING MATERIAL AND ITS PRODUCTION AND USE |
摘要 |
A novel high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl groups in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability. |
申请公布号 |
DE3574418(D1) |
申请公布日期 |
1989.12.28 |
申请号 |
DE19853574418 |
申请日期 |
1985.05.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUKUYAMA, SHUN-ICHI;YONEDA, YASUHIRO;MIYAGAWA, MASASHI;NISHII, KOTA |
分类号 |
G03F7/004;G03F7/075;(IPC1-7):G03F7/10 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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