| 摘要 |
A semiconductor device having a hetero-junction (3) between a semiconductor layer (2A,B) having a larger band gap and a semiconductor layer (1) having a smaller band gap, in which a bidimensional charge carrier gas (4) is formed, which is limited to a mesa-shaped part (5) of the layer structure. According to the invention, the sidewall (6) of the mesa extends to within the semiconductor layer (2) having the larger band gap, but does not extend as far as the semiconductor layer (1) having the smaller band gap in order to avoid surface traps at the edge of the mesa. Application inter alia is in HEMT devices and ballistic transistors. |
