| 摘要 |
PURPOSE:To realize complete isolation between elements by a method wherein resistivity is heightened of a B phosphide layer grown epitaxially on an Si substrate. CONSTITUTION:A B phosphide layer 12 is epitaxially grown on an Si substrate 11, which is followed by the formation of an Si nitride film to cover the layer 12. Next, the entirety is subjected to a heat treatment that is effected in inert gas at temperatures not lower than 1,000 deg.C lasting not shorter than 2hr. In this process, excessive P ions in the B phosphide are driven into the Si substrate 11 for the formation of an N type diffused layer 13 on the Si substrate 11. In the B phosphide layer 12, the initial resistivity 10<-2>OMEGA/cm is now 10<6>OMEGA/cm or higher. Further, an Si layer is epitaxially grown and then removed except where active element regions are located. |
