| 摘要 |
<p>A non-volatile semi-conductor memory device comprises a memory cell array (9) comprised of memory cells, the array (9) being capable of writing and erasing data electrically, an address de-coder (2) responsive to addresses for selecting memory cells, a read/write circuit (3) for reading data stored in memory cells and for writing data to memory cells, a control circuit (1) responsive to a control input signal for controlling the address de-coder (2) and the read/write circuit (3) and a write protection circuit (5) having an external input terminal (6). The write protection circuit is arranged to protect a specific region of the memory cell array (9) from being written by fixing a potential of the external input terminal (6).</p> |
