Improved means for effecting attachment to molybdenum contacts particularly in semi-conductor devices

摘要

1,040,567. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. Nov. 13, 1963 [Nov. 15, 1962], No. 43242/62. Heading H1K. A molybdenum contact member and the goldsilicon alloy electrode of a semi-conductor device are joined by placing a gold-silicon foil between them and heating in a non-oxidizing atmosphere. In the embodiment the electrode is a gold-silicon-antimony mass alloyed to a silicon body to form therewith a PN junction of a transistor. It is assembled with the molybdenum contact, preferably gold-plated, and a gold-silicon-antimony foil (0À2-1% by weight antimony) which may also contain 0À05% by weight phosphorus to give improved mechanical properties. The assembly is then heated under pressure at 390‹ C. in hydrogen.