Integrated current-mirror arrangement comprising vertical transistors.

摘要

A current-mirror arrangement comprises a first and a second transistor whose bases are interconnected and connected to the collector of the first transistor. The transistors are constructed as vertical transistors each having a collector region (23a, 23b) of a first conductivity type, isolated from a substrate (21) of the first conductivity type by an intermediate layer (22) of a second conductivity type, a connection being provided between said intermediate layer (22) and the interconnected bases (29, 30) of the two transistors.