发明名称 Process for imaging multi-layer resist structure.
摘要 <p>An image is provided by depositing a first layer of a photoresist containing a phenolic-formaldehyde novolak type polymer and an imidazole, benzimidazole, triazole, or indazoles to increase the solubility of the layer in aqueous alkaline developer after exposure to imaging radiation; depositing on the first layer a second layer of a photoresist containing a phenolic-formaldehyde novolak type polymer; the second layer having a lower degree of solubility in aqueous alkaline developer after exposure to imaging radiation; exposing the layers to imaging radiation; and developing the layers.</p>
申请公布号 EP0346650(A2) 申请公布日期 1989.12.20
申请号 EP19890109194 申请日期 1989.05.22
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHIONG, KAOLIN NG
分类号 G03F7/022;G03F7/023;G03F7/095;G03F7/26;H01L21/027 主分类号 G03F7/022
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