| 摘要 |
PURPOSE:To reduce contact resistance between an electrode and a clad layer by exposing an n-GaAs contact layer 22 and using a thin uniform layers as the n- GaAs contact layer 22. CONSTITUTION:An n-Ga1-zAlzAs layer 21, the n-GaAs contact layer 22, an n- Ga1-xAlxAs clad layer 2, an n or p-Ga1-yAlyAs active layer 3, the n-Ga1-xAlx As clad layer 4 and a p-Ga1-wAlwAs contact layer 5 are grown onto an n- GaAs substrate 1 in succession in an epitaxial manner. The n-GaAs substrate 1 is removed completely. The n-Ga1-zAlzAs layer 21 is removed, and the n-GaAs contact layer 22 is exposed. The thickness of the n-GaAs contact layer 22 is made comparatively thin. |
