发明名称 Dielectric thin film, and method for making the thin film
摘要 A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.
申请公布号 US4888246(A) 申请公布日期 1989.12.19
申请号 US19860866206 申请日期 1986.05.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KUWATA, JUN;FUJITA, YOSUKE;TOHDA, TAKAO;ABE, ATSUSHI;MATSUOKA, TOMIZO
分类号 C23C14/08;H01L21/28;H01L21/314;H01L21/316;H01L29/49;H01L29/51;H01L29/786 主分类号 C23C14/08
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