发明名称 |
Method of manufacturing an soi-type semiconductor device |
摘要 |
The present semiconductor device comprises a first semiconductor substrate, an oxide film formed on the substrate and a second semiconductor substrate bonded to the oxide film. In particular, the semiconductor substrate further has a monocrystalline silicon layer which is formed by an epitaxial growth method on the second semiconductor substrate. Circuit elements are formed within the monocrystalline silicon layer.
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申请公布号 |
US4888304(A) |
申请公布日期 |
1989.12.19 |
申请号 |
US19860943862 |
申请日期 |
1986.12.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAGAWA, KAORU;YAMAMOTO, YOSHIO;MATSUOKA, NOBUTAKA |
分类号 |
H01L21/02;H01L21/20;H01L21/58;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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