发明名称 Semiconductor memory device using stored capacitor charge for writing data
摘要 A semiconductor memory device having a memory portion and a sense amplifier portion through which data is written into, preferably also read out from the memory portion, the improvement in which a capacitor is connected with the sense amplifier portion to perform the writing of the data by the use of charge stored in the capacitor.
申请公布号 US4888736(A) 申请公布日期 1989.12.19
申请号 US19880142972 申请日期 1988.01.12
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HASHIMOTO, MASASHI;NOMURA, MASAYOSHI
分类号 G11C11/401;G11C11/4091;G11C11/4094 主分类号 G11C11/401
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