发明名称 |
Process for making a contact structure including polysilicon and metal alloys |
摘要 |
A multi-layer contact process is described for providing contact to a shallow semiconductor region forming a semiconductor PN junction and with a silicon semiconductor body. The multi-layer structure includes a layer of polycrystalline silicon doped with an impurity of the same conductivity type as that of the semiconductor region. A first layer of a refractory alloy is deposited over the polycrystalline silicon layer to provide electrically stable interface therewith. A second layer of another refractory metal or alloy is deposited over the first refractory metal alloy layer and serves to protect the shallow PN junction against current leakage failure. A third layer of interconnect metal is deposited over the multi-layer contact structure. The resulting structure provides a low resistance ohmic contact to a shallow semiconductor region with improved electrical characteristics.
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申请公布号 |
US4888297(A) |
申请公布日期 |
1989.12.19 |
申请号 |
US19870110996 |
申请日期 |
1987.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOELFOTOH, MOHAMED O.;TSANG, YUK L. |
分类号 |
H01L21/285;H01L23/485 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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