| 摘要 |
PURPOSE:To obtain an element possessing stable light emitting characteristics by using an inorganic semiconductor having hole and electron conductivities as hole and electron injection layers. CONSTITUTION:A transparent electrode (ITO) 2, a hole injection layer 3 consisting of a P-type Si1-XCX, an organic luminescent material thin film layer 4, an electron injection layer 5 consisting of an N-type Si1-XCX, and a back electrode 6 are laminated in order on a glass substrate 1. In other words, the laminating structure consists of three layers, that is: the organic luminescent material thin film layer 4; the hole injection layer 3 composed of a P-type Si1-XCX thin film and an N-type Si1-XCX thin film which are laminated by bringing the above films into contact with both faces of the layer 4; and the electron injection layer 5 is formed between a pair of electrodes 2 and 6. Thus, brightness deterioration due to aging and the change of characteristics due to ambient temperature and moisture do not increase very much. |
