METHOD FOR GROWING SILICON,申请号JP19880142989-传众专利搜索

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发明名称	METHOD FOR GROWING SILICON
摘要
申请公布号	JPH01313394(A)	申请公布日期	1989.12.18
申请号	JP19880142989	申请日期	1988.06.09
申请人	NEC CORP	发明人	OSHITA YOSHIO
分类号	C30B25/02;C30B29/06;H01L21/205	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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