| 摘要 |
PURPOSE:To allow the current region of a bistable action to operate extensively, stably and to be superior in reproducibility by specifying the relation between excitation and non- excitation regions. CONSTITUTION:This laser is equipped with: a non-excitation region 16; a plurality of excitation regions 20 and 21 which have different lengths and are disposed in parallel; a slant face 24 having a slope which is adjacent to a plurality of the excitation regions 20 and 21 and has an inclination of 45 deg. in the longitudinal direction of a resonator. Thus it has the structure where the surface of a transparent layer is exposed to a laser oscillation beam of light by making a hole 25 in a semiconductor multilayer structure in such a way that a part of an active layer 12 is contained into the non-excitation region in the perpendicular direction. In such a case, where the ratio of the whole length of the excitation regions to a non- excitation region is expressed by a ratio: (1-h):h(0<h<1); besides, a loss beta which is resulted from standardizing a loss alpha of the whole non-excitation region by using a loss GAMMA of the resonator is expressed by an expression I as per attached, the ratio of a differential gain coefficient ga to a differential gain coefficient gb: ga/gb as well as the ratio of carrier natural lives: taua/taub have a relation expressed by an expression II as per attached. This relation makes a bistable action possible and, further, renders its tolerence wider and thus allows a current region to be superior in controllability and reproducibility. |
