发明名称 PRODUCTION OF THIN FILM OF COMPOUND METAL OXIDE
摘要 PURPOSE:To obtain easily a thin film of a compound metal oxide from a mixture consisting of each specified compd. of Bi, Sr, Ca and Cu without causing generation of powder and without performing heat-treatment by dissolving said mixture in an org. solvent, coating the soln. on a substrate, and irradiating the coated substrate with ultraviolet rays and infrared rays. CONSTITUTION:A Bi alkoxide expressed by Bi(OR1)(OR2)(OR3), (wherein each R1 to R3 is 1-6C alkyl), is mixed with alkoxides of Sr and Ca expressed by A(OR1) (OR2), (wherein A is Sr and Ca), an org. acid salt of Cu(e.g., formate), a Cu alkoxide expressed by Cu(OR)l(X)m, (wherein R is R1; each l and m is zero or 1-2; l+m is 2; X is a group expressed by the formula I or II), and a beta-di-ketone complex or beta-ketoester complex in a proportion so as to contain same proportions of metals as those in an aimed compound metal oxide, and the mixture is dissolved in an org. solvent(e.g., ethanol). The soln. is then coated on a substrate(e.g., ZrO2) on a solid, and irradiated with ultraviolet rays and infrared rays, to cause decomposition and oxidation.
申请公布号 JPH01313329(A) 申请公布日期 1989.12.18
申请号 JP19880143595 申请日期 1988.06.13
申请人 MITSUBISHI METAL CORP 发明人 SAKAI KAZUHIRO
分类号 C01G1/00;C01G29/00;C23C18/08;H01B12/06;H01B13/00;H01L39/24 主分类号 C01G1/00
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