| 摘要 |
PURPOSE:To enhance electric conductivity of an amorphous Si film by one or more order by a material wherein a small quantity of carbon or oxygen is contained in the amorphous Si film. CONSTITUTION:SiH4 gas is introduced into a vacuum, and at the same time CH3 or O2 gas is introduced into the same in amount of about 1ppm. This causes a small quantity of C or O to be contained in an amorphous Si film in the doped state. By so doing, electric conductivity of the amorphous Si film can be enhanced by one or more order. |
