| 摘要 |
The invention relates to a microwave diode consisting of three, p<+>-doped, intrinsic and n<+>-doped, silicon regions. This diode is formed by an intrinsic-silicon partition 14 defined, in the thickness of a substrate 15, by two wells 16, 17. The walls of the wells are doped, one p<+> type and the other n<+> type, in order to form, on the walls of the partition 14, a p<+> layer 18 and an n<+> layer 19. Two metallisations 20, 21 descending into the wells 16, 17 provide the contacting. The wells are anisotropically etched, the walls of the partition 14 being in a crystallographic plane (111) perpendicular to the crystallographic plane (110) of the substrate 15. Application to rapid switching at microwave frequencies. <IMAGE>
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