发明名称 BONDING OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the deformation of a lead frame due to the thermal expansion and the oxidation of the frame surface from occurring by a method wherein a metallic wire is brought into contact with an outer leading electrode and the contact part irradiated with laser is cooled down after melting and mixing processes to be brought into an ohmic contact. CONSTITUTION:The end of a copper wire 1 held by a clamper 4 is brought into contact with an outer leading-out electrode 3 to irradiate the contact part with laser 5. At this time, if the irradiating angle exceeds the surface of the electrode 3, the electrode 3 is broken down by the laser 5 to make the connection defective. On the other hand, if the laser power is excessive, the copper wire 1 and the electrodes 3 may be evaporated. Consequently, the laser 5 is selectively irradiated at high condensing ratio not to irradiate a semiconductor element 2 excluding the outer leading-out electrode 3. Through these procedures, the deformation of a lead frame due to thermal expansion and the oxidation of the frame surface can be reduced.
申请公布号 JPH01310547(A) 申请公布日期 1989.12.14
申请号 JP19880142282 申请日期 1988.06.08
申请人 NEC CORP 发明人 IINO KAZUHIRO
分类号 H01L21/60 主分类号 H01L21/60
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