Method for determining the end point in a planarising plasma etch-back process

摘要

The determination of the end point in a planarising etch-back process (I, II), in which plasma ablation of a spin-on glass layer situated on a plasma oxide, the layer being of the type as used for planarisation of the dielectric for, in particular, semiconductor substrates provided with multilayer wiring, is carried out in a plasma, is effected by measuring the emission of the plasma. Preferably use is made, for said determination, of the strong bands of the electronic transition B<1> SIGMA ->A<1> pi in the CO molecule. The method is used in the fabrication of VLSI (very-large-scale integrated) semiconductor circuits and permits exact setting of the end point in the spin-on glass removal. <IMAGE>