| 摘要 |
<p>PURPOSE:To achieve excellent contact by making a thin film resistor composed of a sintered body of fine particles of ruthenium oxide and iron oxide. CONSTITUTION:A coating composition containing both a compound having ruthenium in its structure and a compound having iron in its structure is applied to a board and then the coated board is sintered. In addition to the metal-based electroconductive mechanism, the electroconductive mechanism derived from a heat activation process caused by iron oxide entering the grain boundary of ruthenium oxide and serving as a barrier or that derived from the tunnel effect contribute to giving a very small temperature coefficient of resistance to the resistor. Further, selected sintering temperatures allow few particles to grow, whereby the sophisticated structure of a sintered body remains intact. In this way, addition of manganese has the effect of suppressing both growth of particles and gasification of ruthenium, thereby allowing modest variations in resistance value with increasing sintering temperatures. Accordingly, the temperature coefficient of resistance is reduced, which then allows excellent contact to be obtained.</p> |
