发明名称 SILICON DIOXIDE FILMS ON DIAMOND
摘要 A method for producing oriented diamond films on a substrate. Diamond seed crystals are suspended in a slurry (1) and applied to the substrate surface (2). Heating (3) the substrate removes the slurry fluid and produces seed crystals whose (111) crystal planes are substantially parallel to the plane of the substrate. An oriented polycrystalline diamond film may be grown about the seed crystals by CVD (4).
申请公布号 WO8911897(A1) 申请公布日期 1989.12.14
申请号 WO1989US02412 申请日期 1989.06.02
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 GEIS, MICHAEL, W.;EFREMOW, NIKOLAY, N.;SMITH, HENRY, I.
分类号 C30B28/14;B01D9/02;C23C16/02;C30B7/00;C30B25/02;C30B25/18;C30B29/04;H01L21/205;H01L21/84 主分类号 C30B28/14
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