| 摘要 |
PURPOSE:To enable the formation of a resistor stable in performance and high in resistance throughout a wide range of temperature by a method wherein P-type and N-type dopants are implanted by design into a resistor forming region in a semiconductor substrate and are allowed to coexist there. CONSTITUTION:Attention is paid to the fact that a high dose doping and high resistivity may be attained when ions of both P-type and N-type dopants are implanted into a resistance layer on a semiconductor substrate and, for the formation of such a resistor, P-type and N-type dopant ions are implanted by design into a region specified for this purpose on a semiconductor substrate and are allowed to coexist there. This method enables an increase in the dosage, renders low the dependency on temperature of the resistance value, and produces a resistance layer presenting a high resistance value. |
