PROCESS AND APPARATUS FOR PLASMA TREATMENT OF SEMICONDUCTOR MATERIALS

摘要

1. Process for treating a semiconductor material, consisting in placing the material (8) in an electrically insulating enclosure (2) and subjecting it, in the enclosure, to a plasma of a gaseous compound which is appropriate to the treatment, this plasma being obtained by the action of a uniform magnetic field (BO ) in the enclosure (2) and of a radio-frequency electromagnetic field which is produced in the enclosure (2), in the region of action of the uniform magnetic field, and whose magnetic component (BT ) is perpendicular to the uniform magnetic field, the two fields (BO , BT ) being produced by means external to this enclosure.