| 摘要 |
PURPOSE:To enhance breakdown strength against temperature change and strain by providing a supporting body comprising metals which are bonded through an intermediate layer that absorbs strain with plastic deformation on the lower surface of a rim comprising Si. CONSTITUTION:An SiO2 film is formed on an Si substrate 1. Thereafter, a film on the upper surface side is etched away, and an SiO2 film 4 on the rear surface side is made to remain. Then, an Si3N4 film 2 is grown on the upper surface of the substrate 1. An X-ray screening pattern 3 comprising Au and Cr is formed on the film 2. Then, a hole is formed in the SiO2 film 4. With the film 4 as a mask, the Si substrate 1 undergoes anisotropic etching, and a window 1A is formed. The remaining Si substrate 1 becomes a rim. Then, a ring shaped supporting body 5 comprising Cu on one surface of which an Sn film 6 is formed is overlapped so that the Sn film 6 faces the SiO2 film 4. A DC voltage is applied between the supporting body 5 and the Si3N4 film 2, and both parts are bonded with each other. |
