| 摘要 |
<p>This improved field effect transistor (FET) electrode comprises a FET, a thin carbon film (1) covering the surface of an insulating film at the gate of the FET, and an organic thin film (2) further covering the thin carbon film. The thin film (1) is specified to have in parts a polyhedral structure and to have a specific electric resistance after covering of 10 ohm cm or less. The organic thin film is specified to have a red-ox response, for example an electrolytically polymerised 2,6-xylenol. An ion-selection field effect transistor (ISFET) is produced by further covering the organic thin film (2) with ion selective thin films. An enzyme-sensitive FET which can detect the living substances, can be produced by further covering the ion-sensitive thin film with enzyme-active films.</p> |
