发明名称 Optical semiconductor device.
摘要 <p>An optical device for producing or receiving a light beam having a variable wavelength comprises an active layer (12) having a thickness for allowing formation of quantum well, first and second conductive layers (15, 16) provided so as to hold the active layer laterally from right and left for injection or collection of the carrier into or from the active layer, first and second electrodes (18, 19) provided on the first and second conductive layers so as to make ohmic contact therewith, first and second confinement layers (13, 11) provided parallel to the active layer so as to sandwich the active layer from up and down for confining the carrier in the active layer, a third electrode (17) provided on the first confinement layer so as to form Schottky contact therewith such that there is formed a quantum wire in the active layer between a pair of depletion region formed in correspondence to the third electrode, a fourth electrode (17', 17'') provided in correspondence to the third electrode so as to face the third electrode, and biasing circuit (20, 20') for applying a variable voltage across the third and fourth electrode.</p>
申请公布号 EP0345626(A2) 申请公布日期 1989.12.13
申请号 EP19890109880 申请日期 1989.06.01
申请人 FUJITSU LIMITED 发明人 OKADA, MAKOTO
分类号 H01L33/06;H01L31/0352;H01L31/10;H01L31/112;H01S5/00;H01S5/062;H01S5/20;H01S5/34 主分类号 H01L33/06
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