| 摘要 |
PURPOSE:To obtain an electrode for a solid-state element meeting the power resistance, loss as a device and mass-productivity entirely by making the electrode formed on a board, an electric wire or a part of a bonding pad for interconnection by means of a wire by an Al alloy thin film with a specific quantity of Li added thereto. CONSTITUTION:The electrode, electric wire or at least of a bonding pad for interconnection by means of wire formed on a surface acoustic wave board, a semiconductor board or an insulation wire board is made by the Al alloy thin film Li of 0.005-3wt.% added thereto. The Al thin film or the Al alloy thin film is formed by the sputtering method, the electron beam vapor-deposition method, the resistance heat method, the inductive heat method, the ion plating method, the CVD method or the thermal diffusion method. Since the film resistivity rate with respect to the concentration wt.% of the additive in the Al alloy thin film Li added thereto is smaller than the case with the addition of Cu, the loss as a surface acoustic wave filter or a surface acoustic wave resonator is reduced and excellent power resistance is obtained when a transmission/reception wave electrode of a high frequency surface acoustic wave element is made by the Li addition Al group alloy thin film. |
