| 摘要 |
PURPOSE:To form the insulated gate field-effect semiconductor device (IGFET), a bipolar transistor and a phototransistor onto the same substrate by constituting the IGFET on the peripheral section of the phototransistor. CONSTITUTION:NIPIN or PINIP-type semiconductors are laminated onto the low-cost substrate 1 such as a glass substrate by using nonsingle crystalline semiconductors, and the IGFET20 with a channel forming region is formed into IPI or INI regions. The phototransistors 21, 22 are formed onto the same substrate so that currents flow in the vertical direction by using the same semiconductor. A first conductive layer 2 shields incident light from the substrate side and the IGFET20 is used as an IGFET having no photosensitivity merely, and wiring in the X-axis direction is formed by first conductive layers 2, 3 and wiring in the Y-axis direction by a second conductive layer 9 in the bipolar phototransistors 21, 22, and the transistors are constituted in matrix shapes. |
