MANUFACTURE OF INVERSE STAGGER TYPE SI THIN FILM TRANSISTOR

摘要

PURPOSE:To obtain transistor characteristics with good reproducibility by a method wherein a P-type impurity is doped without performing etching fundamentally on the intrinsic Si layer to turn completely a left N-type Si layer into an intrinsic state or a P-type and the characteristics of a transistor are uniformized. CONSTITUTION:A gate insulating layer 3 is formed on a substrate 1 with a gate electrode 2 formed thereon and an intrinsic Si layer 4 is formed on a transistor forming part on the film 3. An N-type Si layer 5 is formed on the layer 4. A P-type impurity 9 is doped to the layer 5 using a resist film 8 as a mask and a part, which is doped, of the layer 5 is turned into an intrinsic state or a P-type. Even if an irregularity is generated in an etching depth, the layer 5 is reliably turned into an intrinsic state if a doping is sufficiently executed. Therefore, the characteristics of a transistor in the substrate 1 are uniformized. Thereby, transistor characteristics with good reproducibility are obtained.