| 摘要 |
PURPOSE:To facilitate stable operation for long hours and a long service life by providing a certain density of impurity forming a p type clad layer, an active layer, an n type clad layer doped with Te on a p type GaAs. CONSTITUTION:A V shaped groove 27 is formed in an n type current limiting layer 22 formed on a type GaAs substrate and a p type clad layer, an n type active layer 24, an n type clad layer 25 doped with Te and a cap layer 26 are consecutively formed. The thickness of the active layer 24 is maximum at the center of the V shaped groove 27 producing the distribution of refractive index in horizontal direction. The laser element with stable operation for a long service life is obtained. |
